This paper describes the performance prospect of scaled cross-current tetrode\r\n(XCT) CMOS devices and demonstrates the outstanding low-energy aspects of\r\nsub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy\r\nefficiency improvement of such scaled XCT CMOS circuits (two orders higher) stems\r\nfrom the ââ?¬Å?source potential floating effectââ?¬Â, which offers the dynamic reduction of effective\r\ngate capacitance. It is expected that this feature will be very important in many medical\r\nimplant applications that demand a long device lifetime without recharging the battery.
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